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A high-electrical-resistance region as high as 1×104 Ω·cm can be formed in Si-doped InP (n=1×1018 cm-3) layers by 8×1014 cm-2 Ga focused ion beam (FIB) implantation and 500–600°C annealing. The clear photoresponse is also observed in the Ga-FIB-implanted diode structures after annealing. A drastic carrier concentration decrease and the existence of residual defects are confirmed by Raman scattering measurement.
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Asahi et al. (1989) studied this question.
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