Recent progress of resist and resist process in Japan

The procedure for pattern fabrication by photolithography is described, highlighting the need for resists that are sensitive to 436-nm and 248-nm light for submicrometer lithography. Recent developments in 436-nm resists are summarized. A two-layer resist process using silicon-containing resists and resists for Kr/F excimer lasers are discussed. The latter method, which uses 248-nm radiation, has great potential but requires considerable development before it becomes a practical method.>