The low temperature crystallization of ferroelectric Sr2Nb2O7 thin films on the Pt/TiO2/SiO2/Si(100) substrate was attained by rapid thermal annealing followed by each coating step using Sr2Nb2O7 precursor solution. X-ray diffraction results indicated that the crystallization of the Sr2Nb2O7 phase was initiated at 550 °C, and the Sr2Nb2O7 films exhibited the (0k0) orientation. The dielectric constant and loss value of the films annealed at 650 and 750 °C are 48, 0.022 and 50, 0.007, respectively, at room temperature (100 kHz).
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Shoyama et al. (1999) studied this question.
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