Cu 2 GeSe 3 and Cu2GeSe3:Co2+ single crystals are grown using the modified Bridgman method. The grown single crystals have orthorhombic structures. The energy band gaps for Cu2GeSe3 and Cu2GeSe3:Co2+ single crystals measured at 298 K were about 0.789 and 0.798 eV, respectively, and these gaps are due to direct transitions. The Burstein-Moss effect due to overlapping of the energy level of Co2+(Td) and the conduction band of the Cu2GeSe3:Co2+ is observed.
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Lee et al. (1999) studied this question.
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