Cleaved GaAs surfaces decompose under weak pulsed-laser irradiation, leading to the formation of metallic Ga islands. The reduction of band bending nonuniformities in photoemission spectra acquired during the laser pulses, in concert with new core-level fitting techniques which treat broadened spectra, permits a detailed analysis. A decomposition rate consistent with a two-step photochemical excitation process is measured. The surface remains largely intact on an atomic scale, but is increasingly unable to support excited surface states as decomposition proceeds.
No takes yet. Share an insight, caveat, or question.
Long et al. (1992) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: