The growth of silicon oxide layers immediately following the deposition of an epitaxial silicon film has been studied, using the reaction Water vapor or mixtures of and H 2 can be used successfully. The formation of amorphous layers on Si substrates, using hydrogen as a carrier gas, proceeds with an activation energy of about 82 kcal/mole. The excess hydrogen plays an important part, as it appears that Chemisorption of reduction products of determines the growth of continuous layers on the substrate.
No takes yet. Share an insight, caveat, or question.
Steinmaier et al. (1964) studied this question.