Bendable GaN high electron mobility transistors on plastic substrates

A procedure for fabricating flexible forms of high electron mobility transistors (HEMTs) supported on plastic substrates is described. The process uses a combination of conventional top-down, wafer scale fabrication protocols to define a printable form of ultrathin, device quality multilayer AlGaN∕GaN single crystalline microstructures—a so-called microstructured semiconductor ink—and soft-lithographic printing methods to effect their registered transfer to a plastic substrate. These procedures yield high performance, bendable HEMT arrays that are mechanically durable—ones with effective transconductances exceeding nearly all reported forms of printed thin-film transistors.