Electrical properties and x-ray photoelectron spectroscopy studies of Bi(Zn0.5Ti0.5)O3 doped Pb(Zr0.4Ti0.6)O3 thin films

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( 1 − x ) Pb ( Zr 0.4 , Ti 0.6 ) O 3 – ( x ) Bi ( Zn 0.5 , Ti 0.5 ) O 3 (PZT-BZT) (x=0, 0.03, 0.05, 0.08, and 0.1) films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates by chemical solution deposition using spin-coating. All samples showed highly (111) oriented perovskite phase and no other phase was observed. The ferroelectric properties of PZT-BZT films were systematically investigated as a function of the content x of the BZT solution. It is found that BZT doping in PZT films could greatly enhance the remnant polarization (Pr), as well as improve the fatigue property. In a 3 wt % BZT-doped PZT film, the 2Pr and the coercive field (Ec) are 90 μC/cm2 and 95 kV/cm at 10 kHz, respectively, at an electric field of 500 kV/cm, and the leakage current density is less than 1×10−7 A/cm2. The impact of BZT doping on the structure of PZT has been investigated by x-ray photoelectron spectroscopy.