The influence of spontaneous and strain-induced piezoelectric polarizations on the photovoltaic characteristics of an Al0.14Ga0.86N/In0.21Ga0.79N superlattice (SL) solar cell is numerically investigated. The simulation results show that, compared with the conventional p-i-n structure, the Al0.14Ga0.86N/In0.21Ga0.79N SL solar cell has better photovoltaic characteristics and is less sensitive to the effect of internal polarization. Therefore, the use of an SL structure in the III-nitride solar cells is advantageous if both the polarization effect and the crystal quality are of major concern.
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Kuo et al. (2012) studied this question.
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