Ultrafast hot electron relaxation time anomaly in InN epitaxial films

This is the authors' abstract. We don't add key points for this paper.

Ultrafast carrier dynamics in InN epitaxial films was investigated by using femtosecond time-resolved pump-probe reflectivity measurements with a photon energy of 1.58eV. The hot electron relaxation time decreased with increasing electron density (n), measuring at n−0.5. The result was contradictory to what was expected from the hot phonon effect and the screening effect. The authors attributed this result to the important role played by electron-electron scattering in hot electron relaxation.