Nanoscale capacitors based on metal-insulator-carbon nanotube-metal structures

We report the fabrication process and the electrical characteristics of a nanocapacitor structure using metal-insulator-carbon nanotube-metal layers. The structure shows high capacitance and the possibility of ultrahigh integration density due to the unique nanotube structure. Nanoscale and high-aspect-ratio patterns are achieved by electron beam lithography for the fabrication of these vertical nanostructures. This structure can be substituted for capacitors based on the silicon pillar structure in dynamic random access memory or as a nanoscale capacitor for various nanoelectronic devices.