Device characteristics and performance estimation of nearly lattice-matched InAlN/AlGaN heterostructure field-effect transistors

A nearly lattice-matched In0.12Al0.88N/Al0.21Ga0.79N heterostructure field-effect transistor (HFET) was fabricated and its device characteristics were evaluated. The fabricated device showed good pinch-off characteristics with a high breakdown field of 118 V/μm. A simple device calculation based on the experimental results showed the possibility that a low specific on-resistance below those of conventional AlGaN-channel HFETs can be achieved for InAlN/AlGaN HFETs in the case where a specific contact resistivity is less than 1 × 10−5 Ω cm2.