In this paper, we discuss the nonlinear performance difference between surface acoustic wave (SAW) and bulk acoustic wave (BAW) resonators, which include intermodulation distortion (IMD) or triple-beat (TB) products, and indicate the importance of reducing even-order nonlinearities of BAW resonators. We were able to validate the accuracy and efficiency of our proposed simulation technique for BAW devices by comparing the results of our simulation with experimental data. We verified that our circuit model is a high-performance tool that can be used to predict BAW device nonlinearities, and we propose how to suppress even-order nonlinearities by employing a thin-film bulk acoustic resonator (FBAR) duplexer for wideband code division multiple access (WCDMA) band 1. Finally, we introduce highly linear FBAR duplexers.
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Ueda et al. (2010) studied this question.
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