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The relaxation rate of hot carriers following picosecond photoexcitation in GaAs-AlGaAs multiple quantum well structures is found to be significantly slower than the corresponding rate for bulk GaAs under high excitations. This is confirmed by a detailed comparison of the hot-luminescence tails for the two cases using picosecond pulse and cw photoexcitations.
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Xu et al. (1984) studied this question.
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