High-κ and Metal-Gate pMOSFETs on GeOI Obtained by Ge Enrichment: Analysis of ON and OFF Performances

For the first time, we report high-κ/metal-gate pMOSFETs fabricated on high-quality 200-mm germanium-on-insulator (GeOI) wafers obtained by the Ge enrichment technique. The highest mobility peak (200cm²/V⋯) and driving current (ION\! = \!115\ /atVG\! - \!Vₜₕ\! = \!-0.8\ VandVDS\! = \!-1.2\ V, forL = 0.5\) have been demonstrated for GeOIHfO₂/TiNpMOSFETs on Ge layers as thin as 50 nm. As compared to silicon-on-insulator control devices, 2×enhancement of peak mobility has been achieved. Due to temperature variation experiments and technology computer-aided design simulations, we have investigated the key physical phenomena responsible for the measuredOFFcurrents (band-to-band tunneling at highVDSand generation–recombination via the Shockley–Read–Hall process at lowVDS).