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The first- and second-order Raman scattering by phonons has been investigated in α-Sn as a function of scattering photon energy. A resonant behavior of both first- and second-order processes has been found near the E₁+Δ₁ gap ({~} 1.85 eV) and a resonance of the first-order process near E₂ (3.7 eV). The scattering by 2Γ (O) phonons develops a peak near resonance in a manner similar to that found for Ge and Si. The results are interpreted in terms of two- and three-band scattering processes.
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Iliev et al. (1977) studied this question.
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