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The photosensitivity of thin silicon field-emitter array structures has been investigated in transmission over the 0.4- to 1.1-μm spectral region. Quantum yields of 45% at 0.90 μm and 0.5% at 1.06 μm have been measured at 90 °K. Image formation at wavelengths longer than 0.85 μm with a resolution approaching 10 line pairs/mm has been demonstrated with prototype 30-mm-diam target structures. It is also shown that large-area avalanche multiplication of carriers may be used without significant image degradation.
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Thomas et al. (1972) studied this question.
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