Liquid Phase Epitaxial Growth of GaxIn1-xSb by Vertical Dipping Method

Epitaxial growth of Ga x In 1- x Sb on InSb or GaSb substrate was made by using a vertical dipping-type furnace, over a whole range of x to investigate the surface morphology of the grown crystal, interface between the epitaxial layer and substrate, electrical properties and lattice constant, in connection with the type of surface, i.e. A or B, of (111) InSb substrate. The growth rate was always about 1.7 times higher on the A surface than on the B surface, irrespective of the value of x . The surface morphology of the grown epitaxial layer depends much on the type of surface of the InSb substrate, and also on the layer thickness. However, the electrical properties do not depend on the type of the surface of the substrate, and agree with the reported results. The InSb substrate was eroded to take Ga metal in it during the epitaxial growth. The reason for the erosion is explained by use of the free energy and the observed disagreements in the phase diagram are discussed in detail.