A diode structure to detect THz/subTHz radiation based on an MBE-grown modulation-doped GaAs/Al0.25Ga0.75As structure is proposed. Devices have an asymmetrically-shaped geometrical form in the plane of the structure and are fabricated as mesas of 2 µm depth by wet etching. The incident terahertz/sub-terahertz radiation induces a voltage signal over the ends of the sample. Detection by non-uniform carrier heating effects under external illumination is explained and the device operation from 10 GHz up to 2.52 THz at room temperature is demonstrated.
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Seliuta et al. (2004) studied this question.
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