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The electric properties of ferroelectric BiFeO3 (BFO) thin films with ZrO2 insulating buffer on Si substrates fabricated by chemical solution deposition were investigated. ZrO2 demonstrates excellent insulating properties on Si substrates. The metal-ferroelectric-insulator-semiconductor (MFIS) structure exhibits clockwise capacitance-voltage hysteresis loops due to the ferroelectric polarization of BFO. The maximum memory windows are 0.66 and 0.78V, respectively, for BFO deposited on postannealed ZrO2 and on unannealed ZrO2 insulating layers. The small memory window of the BFO∕ZrO2 (postannealed) MFIS is caused by significant interface trap states on the BFO∕ZrO2 interface; this is supported by C-V measurements under varying frequency.
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Chiang et al. (2007) studied this question.
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