Complex refractive indices of AlGaAs at high temperatures measured by i n s i t u reflectometry during growth by metalorganic chemical vapor deposition

I n situ reflectometry with a 6328-Å laser beam was used to monitor the AlxGa1−x As growth by metalorganic chemical vapor deposition. The reflection intensity oscillated and was damped with increasing layer thickness. The refractive indices and absorption coefficients were obtained at temperatures of 600, 700, and 800 °C, and these data fall on the line extrapolated linearly from the data obtained up to room temperature. The temperature coefficient of the X-indirect band gap was found to be smaller than that of the Γ-direct band gap. A method for obtaining the growth parameters during deposition is proposed.