A Method for Identifying Sources of Reactive Ion Etch Lag and Loading in a Magnetically Enhanced Reactive Ion Etcher

The objective of this paper is to establish a diagnostic method for etch processes which involves identification of the possible sources of reactive ion etch (RIE) lag and loading and the systematic examination and elimination as appropriate for a magnetically enhanced reactive ion etch (MERIE) chamber. A statistical model based on experimental data from the process window is built. Analysis of the model will provide the important experimental control parameters which impact the response variables of interest. With this information, the ion and/or neutral transport mechanisms which cause RIE lag and loading can be identified. This method is applied to an experimental MERIE chamber and can be used to eliminate lag for a standard contact type process.