Low-frequency noise spectral density in chalcogenide-based phase-change memory cells has been measured, discussing the role of trapping centers and static disorder as responsible for a noise level in the vitreous insulating state two orders of magnitude higher than in the ordered conducting polycrystalline one. The magnitude of 1∕f noise has been also studied as a function of the applied voltage and exploited to experimentally investigate the transport mechanisms in chalcogenide alloys, showing that the exponential increase of noise spectral density with voltage can be quantitatively explained by considering an avalanchelike multiplication phenomenon.
No takes yet. Share an insight, caveat, or question.
Fantini et al. (2006) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: