A description is given of the nonohmic behavior obtained in (Sn x Ti 1− x )O 2 ‐based systems. A matrix founded on (Sn x Ti 1− x )O 2 ‐based systems doped with Nb 2 O 5 leads to a low‐voltage varistor system with nonlinear coefficient values of ∼9. The presence of the back‐to‐back Schottky‐type barrier is observed based on the voltage dependence of the capacitance. When doped with CoO, the (Sn x Ti 1− x )O 2 ‐based system presents higher nonlinear coefficient values (>30) than does the SnO 2 ‐based varistor system.
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Bueno et al. (2002) studied this question.
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