Nd-doped GaAs epitaxial layers are grown by low-pressure metalorganic chemical vapour deposition. Nd doping as high as 1019 cm-3 is achieved at a source temperature of 100°C using an organic rare-earth source, (CH3C5H4)3Nd. Nd concentrations in GaAs can be controlled by source temperature in the range from 1017 to 1019 cm-3. Photoluminescence due to intra-4f-shell transitions in Nd3+ ions is observed around 0.9 eV, 1.1 eV, 1.4 eV. The spectra are nearly independent of Nd concentration and show maximum intensity at 8×1018 cm-3. However, the spectra slightly depend on the growth temperature, reflecting the change in relative density of Nd3+ emitting centers with different surrounding atomic configurations.
No takes yet. Share an insight, caveat, or question.
Nakagome et al. (1989) studied this question.