In this letter are reported admittance spectroscopy experiments on Yb-doped p- and n-type InP grown by the synthesis method. The purpose is to give a clear understanding of the rare-earth ion electrical behavior. In p-type material, the results indicate the presence of two peaks in the conductance spectra at low temperature. The activation energies of these levels have been found to be 42±5 and 50±5 meV above the valence band. We attribute them to Mg and Yb, respectively. In n-type material, the conductance spectra present a peak at low temperature with an activation energy of 29±3 meV below the conduction band and we attribute it to Yb ion. To explain the origin of these Yb-related traps, we propose that this ion acts as an isoelectronic trap in InP.
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Seghier et al. (1992) studied this question.