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March 1, 1996IEEE Electron Device Letters

An exclusive-nor based on resonant interband tunneling FET's

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Authors

JSJun ShenUniversity of WollongongSTS. TehraniON Semiconductor (United States)HGH. GoronkinMotorola (United States)

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Shen et al. (1996) studied this question.

synapsesocial.com/papers/6a9e7d58e2d0fc9581be6d25https://doi.org/10.1109/55.485178
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