A DC-to-100-GHz InP HEMT 1:2 distributor IC using distributed amplification

The authors describe a 1:2 distributor IC for future very-high-speed optical communication systems. Wideband performance is obtained by applying a distributed amplification technique to a differential circuit. This IC uses a 0.1-μm-gate-length InAlAs-InGaAs-InP HEMT and coplanar waveguide technology. It has a 3-dB bandwidth of 100 GHz with a low frequency gain of -2.5 dB. Up to 100 GHz, return loss and isolation are better than -10 dB and -20 dB, respectively. The authors believe the bandwidth is the widest ever reported for multi-RF-port wideband IC's.