Low Temperature Silicon Epitaxy Using Si2 H 6

Low temperature epitaxy using at atmospheric pressure was studied for minimizing autodoping from highly doped silicon substrate. The epitaxial growth temperature can be reduced to 800°C with good crystalline quality, i.e. , defect density <1/cm 2 . The thickness of transition layer from highly doped substrate to epilayer was also reduced to below 0.3 μm. A bipolar transistor fabricated in the epilayers grown with this technology exhibited base‐collector breakdown voltage of higher than 25V when the epilayer of about 1 μm thick was used.