We report on the design and fabrication of interband cascade light emitting diode (LED) device with InAs/Ga1−xInxSb/InAs quantum well (QW) active region. We have varied indium (In) contents in the QW region between 18 and 30% from x = 0.18 to 0.3 and found that light emission power increases with decrease of In percentage value. We observed a 200% increase in light emission power by decreasing the In content from 30 to 18%. By cooling the LED device, we observed a higher increase in light output power for higher In content devices compared to that of lower In content devices.
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Naresh C. Das (2011) studied this question.
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