Growth and characterization of oxide buffer layers for YBCO coated conductors

Metal oxide films were grown on single crystal oxide substrates and deformation textured metal substrates by a metal organic deposition technique using metal alkoxides as the starting precursor materials. The crystallinity, grain alignment, and morphology of the oxide films depend on the process conditions and the substrate properties. Epitaxial oxide films were grown under a range of oxygen partial pressures and temperatures required for film formation on technologically important metal substrates. YBCO films grown on epitaxial LaAlO/sub 3/ buffer layers on single crystal SrTiO/sub 3/ had J/sub c/'s of 2.2 MA/cm/sup 2/ (77 K, self-field) demonstrating the quality of the MOD derived oxide films.