Hall effect and conductivity in undoped low-resistivity n-type ZnSiP2 single crystals as grown from melt and by vapour phase transport were measured in the temperature range from 77 up to 900 K. Hall mobilities in various samples ranged from 15 to 240 cm2/Vs at room temperature. Analysis of the Hall data of crystals from melt by means of a least square fit yields a density of states effective mass of (0.11 ± 0.02) m0. The concentration dependence of the donor activation energy may be approximated by a linear relationship between ED and the cubic root of the donor concentration ND.
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Siegel et al. (1974) studied this question.
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