Photoresist patterned ruthenium oxide etching for ferroelectric capacitor structured device has been studied using high density helicon wave plasma. The trends in the effect on the etch rate and selectivity to photoresist for BCl3 ratio to Cl2 have been determined. It was found that the strong scavenging effect of BCl3 lead primarily after ion bombardment on the film surface. The possible mechanism on the reduction of the issued by-product, RuO4, during plasma process was proposed using plasma and optical emission data.
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Kim et al. (1998) studied this question.
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