The Influence of Ambient Temperature on the Forward-Bias Electrical Characteristics of p-n Heterojunction and Homojunction Interface

Fabrication, characterization, and modeling of both p-n heterojunction and homojunction were investigated at different ambient temperatures. The measured current-voltage characteristics at different ambient temperatures were in good agreement with calculated characteristics using the dual-diode (DD) model. The DD model together with a numerical method that could be used to extract the parameters has described well the characteristics of the proposed p-n junction under forward bias. The effective diffusion velocity of holes in the n region , effective diffusion velocity of electron in the p region , and average recombination lifetimes in heterojunction and in homojunction were deduced from the extracted diffusion current density and recombination current density . In the temperature range of , the effective diffusion velocities vary as and average recombination lifetimes vary as .