Anisotropies of Compton profiles of tetrahedrally bonded semiconductors

A pseudopotential calculation has been performed for the anisotropies of the Compton profiles of Sn, GaAs, ZnSe, InSb and CdTe. The IV semiconductors have the largest anisotropies followed by the III-V semiconductors and then the II-VI semiconductors, which is consistent with the ionic trend in the bonding character. It is found that the extrema appearing in the dependences on q of a anisotropies have an intimate connection with the bonding properties of the semiconductors. Only small differences are observed, however, between the calculated anisotropies of Si, Ge and Sn (IV semiconductors), between those of GaAs and InSb (III-V) and between those of ZnSe and CdTe (II-VI). It is concluded that, except for the region where q is small, the anisotropies of the Compton profiles of the semiconductors studied are insensitive to the potentials used in the band calculations.