Epitaxial metal-ferroelectric-insulator-semiconductor diodes were fabricated by depositing a chemical-solution-decomposed Sr0.8Bi2.2Ta2O9 (SBT) film on an SrTiO3-coated Si(100) wafer. X-ray diffraction analysis revealed that the SBT film was composed mostly of c-axis-oriented grains. In Pt/SBT(300 nm)/SrTiO3(23 nm)/Si diodes, a memory window as wide as 1.1 V was obtained for a voltage sweep of ±7 V in capacitance-voltage measurement. The capacitance change in per decade increase in the retention time was approximately 10% up to 24 h. The origin of the ferroelectricity in a c-axis-oriented SBT film is discussed.
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Lu et al. (2009) studied this question.
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