One transistor ferroelectric memory with Pt/Pb/sub 5/Ge/sub 3/O/sub 11//Ir/poly-Si/SiO/sub 2//Si gate-stack

One transistor ferroelectric nonvolatile memory with gate stack of Pt/Pb5Ge3O/sub 11//lr/poly-Si/SiO2/Si was successfully fabricated. This device features a saturated memory window of 3 V at a programming voltage of higher than 3 V from C-V and I-V measurements. The memory window decays rapidly within 10 seconds after programming, but remains stable at 1 V for up to 100 h. The "on" and "off" state currents are greater than 10 μA/μm and less 0.01 pA/μm, respectively, at a drain voltage of 0.1 V.