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March 1, 2009Japanese Journal of Applied Physics

Characterization of Light Element Impurities in Ultrathin Silicon-on-Insulator Layers by Luminescence Activation Using Electron Irradiation

Satoko Nakagawa-Toyota Michio Tajima Kazuyuki Hirose Takeshi Ohshima Hisayoshi Itoh

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Abstract

Characterization of Light Element Impurities in Ultrathin Silicon-on-Insulator Layers by Luminescence Activation Using Electron Irradiation, Nakagawa-Toyota, Satoko, Tajima, Michio, Hirose, Kazuyuki, Ohshima, Takeshi, Itoh, Hisayoshi

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Nakagawa-Toyota et al. (2009) studied this question.

synapsesocial.com/papers/6a9e921f6dd05752f40686b1 https://doi.org/10.1143/jjap.48.031201

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