Metalorganic chemical vapor deposition technique for growing c-axis oriented ZnO thin films in atmospheric pressure air

ZnO thin films have been grown in atmospheric pressure and ambient atmospheric air using zinc 2-ethyl hexanoate as zinc source by metalorganic chemical vapor deposition technique. The films grown on glass above 350 °C showed c-axis orientation as seen from x-ray diffraction studies. The films were highly transparent and free from any visual defects. The growth rate and morphology of the film was found to depend on the substrate temperature. Auger electron spectroscopy shows the presence of carbon as an impurity.