High-speed InP-based modified uni-traveling carrier photodiodes with top p-contact on silicon-on-insulator nanowaveguides are reported. The photodiodes have low dark current (1 nA), high bandwidth (65 GHz), and deliver record-high RF output power at 70 GHz (-2 dBm at 20 mA). Balanced and traveling-wave photodiodes of this type have bandwidths of 20 and 35 GHz, respectively.
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Wang et al. (2017) studied this question.
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