In this work the development of a magnetic metal-base transistor that operates by hole transport is reported. The transistor is constructed using p-type silicon as the collector, Co as the base, and Cu2O as the emitter. Both base and emitter are deposited using electrochemical procedures. The transistor shows a magnetic-field-dependent current gain and a magnetocurrent of ∼40% observed for a low emitter current value of 2 mA.
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Torre et al. (2006) studied this question.
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