Rate constants for the reactions of H atoms with the methylsilanes, (CH3)4-nSiHn, n=1–3, have been measured over the temperature range 298–580 K in flash photolysis experiments in which H atoms were produced by the mercury-sensitized photolysis of H2 and monitored by Lyman-α absorption. The values obtained, for n=1–3, respectively, are given by, The results show that methyl substitution increases the reactivity of the Si–H bond towards H atom attack. Comparison is made with previously published data, and with attack by other atoms and free radicals.
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Arthur et al. (1998) studied this question.
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