A diffusion anomaly of a native acceptor defect in ZnSexTe1−x p-n junctions is described. The diffusivities of this defect in n- and p-type crystals at 575°C have been determined. The anomaly can be utilized in a triple-diffusion technique of preparing p-n junction diodes with improved electrical properties.
No takes yet. Share an insight, caveat, or question.
Aven et al. (1968) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: