We devised a synthesis route to prepare narrow band gap GaN/ZnO solid solution nanocrystals via nitriding a homogeneous Ga-Zn-O nanoprecursor. The nanocrystals were characterized by several following methods: x-ray diffractometer, transmission electron microscopy, ultraviolet-visible diffuse reflection, and Raman spectroscopy. Here, we can control the composition of nanocrystals by the nitridation temperature. From 550 to 850 °C, the corresponding crystalline size varies from 6.1 to 27 nm. It has been demonstrated that the sample prepared at 650 °C had the narrowest band gap of 2.21 eV. Microstructural investigations show that the (101) surface is the predominantly exposed one for the GaN/ZnO solid solution nanocrystals. We also discuss the influence of chemical disorder based on the Raman spectra acquired.
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Han et al. (2010) studied this question.
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