A CCD-based, computer controlled RHEED detection and analysis system that utilizes an on-chip integration technique and on-board data manipulation is described. The system is capable of in situ time-resolved measurements of specular and integral-order intensity oscillations, their phase differences, streak linewidths, and epitaxial layer lattice constants. The digital RHEED techniques are described in the context of Co/Au bilayer, GaAs/GaAs, and InxGa1−xAs/GaAs MBE growth. The system is compared to other RHEED detection devices.
No takes yet. Share an insight, caveat, or question.
Barlett et al. (1991) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: