We report on the use of the LaAlO3 (LAO) high-k dielectric as a tunnel barrier in magnetic tunnel junctions. From tunnel magnetoresistance (TMR) measurements on epitaxial La2∕3Sr1∕3MnO3∕LAO∕La2∕3Sr1∕3MnO3 junctions, we estimate a spin polarization of 77% at low temperature for the La2∕3Sr1∕3MnO3∕LAO interface. Remarkably, the TMR of La2∕3Sr1∕3MnO3∕LAO∕Co junctions at low bias is negative, evidencing a negative spin polarization of Co at the interface with LAO, and its bias dependence is very similar to that of La2∕3Sr1∕3MnO3∕SrTiO3∕Co junctions. We discuss possible reasons for this behavior.
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Garcia et al. (2005) studied this question.
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