Fully inkjet‐printed metal‐oxide thin‐film transistors on plastic

Fully inkjet‐printed, transparent conductive oxide thin‐film transistors on polyimide are demonstrated for the first time integrating SnO2:F source/drain electrodes, ZrO2 gate dielectric, and ZnSnO semiconductor layers. A mobility of ∼0.04 cm2 V−1 s−1 was obtained at a maximum thermal processing temperature of 300 °C. In addition to electrical device characterization, SEM, TEM, and EDX analyses were performed to assess microstructure and chemical composition. Through our analysis, we show that future performance improvements require an increase in source/drain conductivity at lower annealing temperatures, the reduction in film cracking due to thermal stress, and the reduction in intermixing between layers occurring during annealing.