Graphene islands grown epitaxially on 6H-SiC(0001) were studied using scanning tunneling microscopy and spectroscopy. Under specific growth conditions, ≈10 nm single-layer graphene islands are observed on top of the SiC buffer layer and align with the SiC(0001)-1×1 lattice directions. Atomic-resolution images show that the edges of the island closely follow an armchair-edge configuration.
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Rutter et al. (2010) studied this question.
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