Semiconductor heterostructures with prescribed energy dependence of the transmittance can be designed by combining: a) Padé approximant reconstruction of the S -matrix; b) inverse scattering theory for Schrödinger's equation; c) a unitary transformation which takes into account the variable mass effects. The resultant continuous concentration profile can be digitized into an easily realizable rectangular-wells structure. For illustration, we give the specifications of a 2 narrow band-pass 12-layer Al c Ga 1 − c As filter with the high-energy peak more than twice narrower than the low-energy one.
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Bessis et al. (1997) studied this question.
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