Analysis of surface layers by the channeling technique: Beam energy dependence

The surface peak of the channeling energy spectrum has been investigated as a function of energy of the incident beam. An increase of the surface peak value with energy has been observed for axial channeling in silicon 〈110〉, germanium 〈111〉, molybdenum 〈111〉, and vanadium 〈100〉 and 〈110〉 crystals with low surface contamination. The influence of oxide layers on the energy dependence effect has been investigated on silicon crystals.